onsemi Single IGBTs ISL9V3040P3

Description
IGBT 430V 21A TO220-3
  • Single IGBTs - ISL9V3040P3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single IGBTs - ISL9V3040P3-ND - DigiKey
    DigiKey
  • IGBTs - Single - ISL9V3040P3 - 1049045-ISL9V3040P3 - Win Source Electronics
    Win Source Electronics
  • Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube - 598-ISL9V3040P3 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Transistor - 16131120 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - IGBTs - ISL9V3040P3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi - 31Y2096 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
IGBT 430V 21A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - ISL9V3040P3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
ISL9V3040P3
Single IGBTs ISL9V3040P3
IGBT 430V 21A TO220-3

IGBT 430V 21A TO220-3

Supplier's Site Datasheet
Single IGBTs - ISL9V3040P3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
ISL9V3040P3-ND
Single IGBTs ISL9V3040P3-ND
IGBT 430V 21A 150W Through Hole TO-220-3

IGBT 430V 21A 150W Through Hole TO-220-3

Buy Now Datasheet
IGBTs - Single - ISL9V3040P3 - 1049045-ISL9V3040P3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - ISL9V3040P3
1049045-ISL9V3040P3
IGBTs - Single - ISL9V3040P3 1049045-ISL9V3040P3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1049045-ISL9V3040P3 Packaging: Tube/Rail Mounting: Through Hole Input Type: Logic Gate Charge: 17nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 21A VCEO Maximum Collector-Emitter Breakdown Voltage: 430V Maximum Power Dissipation: 150W Collector-emitter saturation voltage(Max): 1.6V @ 4V, 6A Turn-on and Turn-off delay time: -/4.8μs Testing Conditions: 300V, 1 kOhm, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 400

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1049045-ISL9V3040P3
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Logic
Gate Charge: 17nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 21A
VCEO Maximum Collector-Emitter Breakdown Voltage: 430V
Maximum Power Dissipation: 150W
Collector-emitter saturation voltage(Max): 1.6V @ 4V, 6A
Turn-on and Turn-off delay time: -/4.8μs
Testing Conditions: 300V, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 400

Buy Now Datasheet
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube - 598-ISL9V3040P3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube
598-ISL9V3040P3
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube 598-ISL9V3040P3
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube

Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube

Supplier's Site
Transistor - 16131120 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16131120
Transistor 16131120
IGBT SINGLE TRANSISTOR, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

IGBT SINGLE TRANSISTOR, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - ISL9V3040P3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
ISL9V3040P3
Discrete Semiconductor Products - Transistors - IGBTs ISL9V3040P3
IGBT 430V 21A TO220-3

IGBT 430V 21A TO220-3

Supplier's Site
Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi - 31Y2096 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi
31Y2096
Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi 31Y2096
IGBT Single Transistor, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 RoHS Compliant: Yes

IGBT Single Transistor, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Utmel Electronic Limited Radwell International Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number ISL9V3040P3 ISL9V3040P3-ND 1049045-ISL9V3040P3 598-ISL9V3040P3 16131120 ISL9V3040P3 31Y2096
Product Name Single IGBTs Single IGBTs IGBTs - Single - ISL9V3040P3 Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube Transistor Discrete Semiconductor Products - Transistors - IGBTs Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3; TO-220
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
VCE(on) 1.6 volts 1.25 volts
PD 150000 milliwatts 150000 milliwatts
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