onsemi IGBTs ISL9V3040P3

Description
EcoSPARK 360V 21A Ignition IGBT TO220
Request a Quote Datasheet
Description
EcoSPARK 360V 21A Ignition IGBT TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Corby, Northants, United Kingdom
IGBTs
8629359
IGBTs 8629359
EcoSPARK 360V 21A Ignition IGBT TO220

EcoSPARK 360V 21A Ignition IGBT TO220

Supplier's Site
Corby, Northants, United Kingdom
EcoSPARK 360V 21A Ignition IGBT TO220

EcoSPARK 360V 21A Ignition IGBT TO220

Supplier's Site
Corby, Northants, United Kingdom
IGBTs
1662175
IGBTs 1662175
EcoSPARK 360V 21A Ignition IGBT TO220

EcoSPARK 360V 21A Ignition IGBT TO220

Supplier's Site
Single IGBTs - ISL9V3040P3-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
ISL9V3040P3-ND
Single IGBTs ISL9V3040P3-ND
IGBT 430V 21A 150W Through Hole TO-220-3

IGBT 430V 21A 150W Through Hole TO-220-3

Buy Now Datasheet
IGBTs - Single - ISL9V3040P3 - 1049045-ISL9V3040P3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - ISL9V3040P3
1049045-ISL9V3040P3
IGBTs - Single - ISL9V3040P3 1049045-ISL9V3040P3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1049045-ISL9V3040P3 Packaging: Tube/Rail Mounting: Through Hole Input Type: Logic Gate Charge: 17nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 175°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 21A VCEO Maximum Collector-Emitter Breakdown Voltage: 430V Maximum Power Dissipation: 150W Collector-emitter saturation voltage(Max): 1.6V @ 4V, 6A Turn-on and Turn-off delay time: -/4.8μs Testing Conditions: 300V, 1 kOhm, 5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 400

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1049045-ISL9V3040P3
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Logic
Gate Charge: 17nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 21A
VCEO Maximum Collector-Emitter Breakdown Voltage: 430V
Maximum Power Dissipation: 150W
Collector-emitter saturation voltage(Max): 1.6V @ 4V, 6A
Turn-on and Turn-off delay time: -/4.8μs
Testing Conditions: 300V, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 400

Buy Now Datasheet
Single IGBTs - ISL9V3040P3 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
ISL9V3040P3
Single IGBTs ISL9V3040P3
IGBT 430V 21A TO220-3

IGBT 430V 21A TO220-3

Supplier's Site Datasheet
Transistor - 16131120 - Radwell International
Willingboro, NJ, United States
Transistor
16131120
Transistor 16131120
IGBT SINGLE TRANSISTOR, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

IGBT SINGLE TRANSISTOR, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube - 598-ISL9V3040P3 - Utmel Electronic Limited
Hong Kong, China
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube
598-ISL9V3040P3
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube 598-ISL9V3040P3
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube

Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube

Supplier's Site
Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi - 31Y2096 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi
31Y2096
Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi 31Y2096
IGBT Single Transistor, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 RoHS Compliant: Yes

IGBT Single Transistor, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - ISL9V3040P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
ISL9V3040P3
Discrete Semiconductor Products - Transistors - IGBTs ISL9V3040P3
IGBT 430V 21A TO220-3

IGBT 430V 21A TO220-3

Supplier's Site

Technical Specifications

  RS Components, Ltd. DigiKey Win Source Electronics ODG (Origin Data Global) Radwell International Utmel Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 8629359 ISL9V3040P3-ND 1049045-ISL9V3040P3 ISL9V3040P3 16131120 598-ISL9V3040P3 31Y2096 ISL9V3040P3
Product Name IGBTs Single IGBTs IGBTs - Single - ISL9V3040P3 Single IGBTs Transistor Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel N-Channel; N-CHANNEL
IC(max) 21 amps 21 amps
PD 150000 milliwatts 150000 milliwatts 150000 milliwatts
Package Type TO-220; TO-220AB TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-3; TO-220
TJ -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F) -40 to 175 C (-40 to 347 F)
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