Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1049045-ISL9V3040P3
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Logic
Gate Charge: 17nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 21A
VCEO Maximum Collector-Emitter Breakdown Voltage: 430V
Maximum Power Dissipation: 150W
Collector-emitter saturation voltage(Max): 1.6V @ 4V, 6A
Turn-on and Turn-off delay time: -/4.8μs
Testing Conditions: 300V, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 400
EcoSPARK 360V 21A Ignition IGBT TO220
EcoSPARK 360V 21A Ignition IGBT TO220
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IGBT SINGLE TRANSISTOR, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT 430V 21A 150W Through Hole TO-220-3
IGBT 430V 21A TO220-3
Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube
IGBT Single Transistor, 21 A, 1.25 V, 150 W, 400 V, TO-220AB, 3 RoHS Compliant: Yes
| Win Source Electronics | RS Components, Ltd. | Radwell International | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1049045-ISL9V3040P3 | 8629359 | 16131120 | ISL9V3040P3 | ISL9V3040P3-ND | ISL9V3040P3 | 598-ISL9V3040P3 | 31Y2096 |
| Product Name | IGBTs - Single - ISL9V3040P3 | IGBTs | Transistor | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Trans IGBT Chip N-CH 390V 21A Automotive 3-Pin(3+Tab) TO-220AB Tube | Igbt Single Transistor, 21 A, 1.25 V, 150 W, 400 V, To-220Ab, 3 Rohs Compliant Onsemi |
| VCE(on) | 1.6 volts | 1.25 volts | ||||||
| PD | 150000 milliwatts | 150000 milliwatts | 150000 milliwatts | |||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | |||
| Packing Method | Rail; Tube; Tube/Rail | Tube | Tube; Tube | Tube; Tube |