Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1049039-ISL9V2040D3S
Packaging: Reel - TR
Mounting: SMD (SMT)
Input Type: Logic
Gate Charge: 12nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-252AA
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 430V
Maximum Power Dissipation: 130W
Collector-emitter saturation voltage(Max): 1.9V @ 4V, 6A
Turn-on and Turn-off delay time: -/3.64μs
Testing Conditions: 300V, 1 kOhm, 5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
EcoSPARK 400V 10A Ignition IGBT DPAK
EcoSPARK 400V 10A Ignition IGBT DPAK
EcoSPARK 400V 10A Ignition IGBT DPAK
IGBT, 430V, 10A, 1.9V Vce(on), 130W, N-Ch, DPAK Product overview: ISL9V2040D3ST from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 430V, 10A, 1.9V, DPAK. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 430V, 10A, 1.9V, DPAK. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-ISL9V2040D3ST can be used for catalog matching and distributor lookup.
IGBT 430V 10A 130W Surface Mount TO-252AA
IGBT 430V 10A 130W Surface Mount TO-252AA
IGBT, 430V, 10A, 175DEG C, 130W ROHS COMPLIANT: YES
IGBT 430V 10A TO252AA
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1049039-ISL9V2040D3ST | 8629347 | 8629347P | 279-ISL9V2040D3ST | ISL9V2040D3STCT-ND | ISL9V2040D3STTR-ND | 54AH9116 | ISL9V2040D3ST | ISL9V2040D3ST |
| Product Name | IGBTs - Single - ISL9V2040D3ST | IGBTs | IGBTs | 430V 10A 1.9V DPAK IGBT Transistor | Single IGBTs | Single IGBTs | Igbt, 430V, 10A, 175Deg C, 130W Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs |
| VCE(on) | 1.9 volts | ||||||||
| PD | 130000 milliwatts | 130000 milliwatts | |||||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 C (-40 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
