onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLW610ATM IRLW610ATM

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047693-IRLW610ATM
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 9nC @ 5V
Max Input Capacitance: 240pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.65A, 5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

MOSFET N-CH 200V 3.3A I2PAK Product overview: IRLW610ATM from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 3.3A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRLW610ATM can be used for catalog matching and distributor lookup.