Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047659-IRLS640A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 56nC @ 5V
Max Input Capacitance: 1705pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 4.9A, 5V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFETs 200V N-Channel a-FET Logic Level Product overview: IRLS640A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRLS640A can be used for catalog matching and distributor lookup.
N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220F-3
MOSFET 200V N-Channel a-FET Logic Level
MOSFET N-CH 200V 9.8A TO220F
MOSFET, N-CH, 200V, 9.8A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:9.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1047659-IRLS640A | 2088-IRLS640A | IRLS640AFS-ND | IRLS640A | IRLS640A | 07AH4075 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLS640A | N-Channel 200V MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 9.8A, To-220F; Transistor Polarity Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 200 volts | |||||
| PD | 40000 milliwatts | 40 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-220; SOT3; TO-220F | Tube | TO-220; TO-220-3 Full Pack | Through Hole | TO-3; TO-220 |
