onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B_FP001 IRFS634B_FP001

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069595-IRFS634B_FP00 1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 4.05A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B_FP001 - 069595-IRFS634B_FP001 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFS634B_FP001-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS634B_FP001 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 250V 8.1A TO-220F - 598-IRFS634B_FP001 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069595-IRFS634B_FP00 1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 4.05A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B_FP001 - 069595-IRFS634B_FP001 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B_FP001
069595-IRFS634B_FP001
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B_FP001 069595-IRFS634B_FP001
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069595-IRFS634B_FP00 1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 4.05A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 069595-IRFS634B_FP001
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 8.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 450 mOhm @ 4.05A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
250V 8.1A MOSFET Transistor
278-IRFS634B_FP001
250V 8.1A MOSFET Transistor 278-IRFS634B_FP001
MOSFET N-CH 250V 8.1A TO220F Product overview: IRFS634B_FP001 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS634B_FP001 can be used for catalog matching and distributor lookup.

MOSFET N-CH 250V 8.1A TO220F Product overview: IRFS634B_FP001 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 8.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 8.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFS634B_FP001 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFS634B_FP001-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFS634B_FP001-ND
Single FETs, MOSFETs IRFS634B_FP001-ND
N-Channel 250V 8.1A (Tc) 38W (Tc) Through Hole TO-220F-3

N-Channel 250V 8.1A (Tc) 38W (Tc) Through Hole TO-220F-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS634B_FP001 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFS634B_FP001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFS634B_FP001
MOSFET N-CH 250V 8.1A TO220F

MOSFET N-CH 250V 8.1A TO220F

Supplier's Site
MOSFET N-CH 250V 8.1A TO-220F - 598-IRFS634B_FP001 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 250V 8.1A TO-220F
598-IRFS634B_FP001
MOSFET N-CH 250V 8.1A TO-220F 598-IRFS634B_FP001
MOSFET N-CH 250V 8.1A TO-220F

MOSFET N-CH 250V 8.1A TO-220F

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069595-IRFS634B_FP001 278-IRFS634B_FP001 IRFS634B_FP001-ND IRFS634B_FP001 598-IRFS634B_FP001
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B_FP001 250V 8.1A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 250V 8.1A TO-220F
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts
PD 38000 milliwatts 38000 milliwatts 38000 milliwatts
Unlock Full Specs
to access all available technical data