onsemi Single FETs, MOSFETs IRFR210BTM_FP001

Description
N-Channel 200V 2.7A (Tc) 2.5W (Ta), 26W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 200V 2.7A (Tc) 2.5W (Ta), 26W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFR210BTM_FP001-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR210BTM_FP001-ND
Single FETs, MOSFETs IRFR210BTM_FP001-ND
N-Channel 200V 2.7A (Tc) 2.5W (Ta), 26W (Tc) Surface Mount TO-252AA

N-Channel 200V 2.7A (Tc) 2.5W (Ta), 26W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore, Singapore
200V 2.7A DPAK MOSFET Transistor
278-IRFR210BTM_FP001
200V 2.7A DPAK MOSFET Transistor 278-IRFR210BTM_FP001
MOSFET N-CH 200V 2.7A DPAK Product overview: IRFR210BTM_FP001 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.7A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR210BTM_FP001 can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 2.7A DPAK Product overview: IRFR210BTM_FP001 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2.7A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.7A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR210BTM_FP001 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM_FP001 - 1047026-IRFR210BTM_FP001 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM_FP001
1047026-IRFR210BTM_FP001
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM_FP001 1047026-IRFR210BTM_FP001
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047026-IRFR210BTM_F P001 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 9.3nC @ 10V Max Input Capacitance: 225pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.35A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047026-IRFR210BTM_FP001
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 26W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 9.3nC @ 10V
Max Input Capacitance: 225pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR210BTM_FP001 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR210BTM_FP001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR210BTM_FP001
MOSFET N-CH 200V 2.7A DPAK

MOSFET N-CH 200V 2.7A DPAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFR210BTM_FP001-ND 278-IRFR210BTM_FP001 1047026-IRFR210BTM_FP001 IRFR210BTM_FP001
Product Name Single FETs, MOSFETs 200V 2.7A DPAK MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR210BTM_FP001 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
PD 2500 milliwatts 2500 to 26000 milliwatts
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