onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76629D3S HUFA76629D3S

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044306-HUFA76629D3S
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1285pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 52 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

20A, 100V, 0.055ohm, N-Channel Power MOSFET, TO-252AA

N-Channel 100V 20A (Tc) 110W (Tc) Surface Mount TO-252AA