onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76619D3ST HUFA76619D3ST

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044305-HUFA76619D3S T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 767pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 85 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76619D3ST - 1044305-HUFA76619D3ST - Win Source Electronics
    Win Source Electronics
  • HUFA76619D3ST - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUFA76619D3ST - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 100V 18A DPAK - 598-HUFA76619D3ST - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044305-HUFA76619D3S T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 767pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 85 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76619D3ST - 1044305-HUFA76619D3ST - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76619D3ST
1044305-HUFA76619D3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76619D3ST 1044305-HUFA76619D3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044305-HUFA76619D3S T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 767pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 85 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044305-HUFA76619D3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 767pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 85 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- HUFA76619D3ST - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
HUFA76619D3ST
HUFA76619D3ST
18A, 100V, 0.089ohm, N-Channel Power MOSFET, TO-252AA

18A, 100V, 0.089ohm, N-Channel Power MOSFET, TO-252AA

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUFA76619D3ST - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUFA76619D3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUFA76619D3ST
MOSFET N-CH 100V 18A TO252AA

MOSFET N-CH 100V 18A TO252AA

Supplier's Site
MOSFET N-CH 100V 18A DPAK - 598-HUFA76619D3ST - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 18A DPAK
598-HUFA76619D3ST
MOSFET N-CH 100V 18A DPAK 598-HUFA76619D3ST
MOSFET N-CH 100V 18A DPAK

MOSFET N-CH 100V 18A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1044305-HUFA76619D3ST HUFA76619D3ST HUFA76619D3ST 598-HUFA76619D3ST
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76619D3ST Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 100V 18A DPAK
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 75000 milliwatts 75000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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