onsemi Single FETs, MOSFETs HUFA76445P3

Description
N-Channel 60V 75A (Tc) 310W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 60V 75A (Tc) 310W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HUFA76445P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUFA76445P3-ND
Single FETs, MOSFETs HUFA76445P3-ND
N-Channel 60V 75A (Tc) 310W (Tc) Through Hole TO-220-3

N-Channel 60V 75A (Tc) 310W (Tc) Through Hole TO-220-3

Buy Now Datasheet
 - HUFA76445P3 - Rochester Electronics
Newburyport, MA, United States
75A, 60V, 0.008ohm, N-Channel Power MOSFET, TO-220AB

75A, 60V, 0.008ohm, N-Channel Power MOSFET, TO-220AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76445P3 - 1044297-HUFA76445P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76445P3
1044297-HUFA76445P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76445P3 1044297-HUFA76445P3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044297-HUFA76445P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4965pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044297-HUFA76445P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 4965pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUFA76445P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUFA76445P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUFA76445P3
MOSFET N-CH 60V 75A TO220-3

MOSFET N-CH 60V 75A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HUFA76445P3-ND HUFA76445P3 1044297-HUFA76445P3 HUFA76445P3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA76445P3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; TO-220AB TO-220; SOT3; TO-220AB TO-220; TO-220-3
rDS(on) 0.0080 ohms
V(BR)DSS 60 volts
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