onsemi HUFA76429D3ST_QF085

Description
N-Channel Logic Level UltraFET Power MOSFET 60V, 20A
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Description
N-Channel Logic Level UltraFET Power MOSFET 60V, 20A
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Datasheet
Datasheet Summary
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N-Channel Logic Level UltraFET Power MOSFET in a JEDEC TO-251AA package, rated for 60 V drain-to-source voltage and 20 A continuous drain current. On-resistance is 0.023 Ω at VGS = 10 V and 0.027 Ω at VGS = 5 V. Thermal resistance from junction to case is 1.36 °C/W, with an operating temperature range of -55 °C to 175 °C. Includes simulation models for PSPICE and SABER, and meets ultra-low on-resistance design targets for high-efficiency switching applications.

Datasheet Summary
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N-Channel Logic Level UltraFET Power MOSFET in a JEDEC TO-251AA package, rated for 60 V drain-to-source voltage and 20 A continuous drain current. On-resistance is 0.023 Ω at VGS = 10 V and 0.027 Ω at VGS = 5 V. Thermal resistance from junction to case is 1.36 °C/W, with an operating temperature range of -55 °C to 175 °C. Includes simulation models for PSPICE and SABER, and meets ultra-low on-resistance design targets for high-efficiency switching applications.

Suppliers

Company
Product
Description
Supplier Links
 - HUFA76429D3ST_QF085 - Rochester Electronics
Newburyport, MA, United States
N-Channel Logic Level UltraFET Power MOSFET 60V, 20A

N-Channel Logic Level UltraFET Power MOSFET 60V, 20A

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number HUFA76429D3ST_QF085
Polarity N-Channel
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