onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75623S3ST HUFA75623S3ST

Description
22A, 100V, 0.064ohm, N-Channel Power MOSFET, TO-263AB
  • HUFA75623S3ST - Rochester Electronics
    Rochester Electronics
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75623S3ST - 1044259-HUFA75623S3ST - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUFA75623S3ST - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
22A, 100V, 0.064ohm, N-Channel Power MOSFET, TO-263AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- HUFA75623S3ST - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
HUFA75623S3ST
HUFA75623S3ST
22A, 100V, 0.064ohm, N-Channel Power MOSFET, TO-263AB

22A, 100V, 0.064ohm, N-Channel Power MOSFET, TO-263AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75623S3ST - 1044259-HUFA75623S3ST - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75623S3ST
1044259-HUFA75623S3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75623S3ST 1044259-HUFA75623S3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044259-HUFA75623S3S T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 85W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 52nC @ 20V Max Input Capacitance: 790pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 64 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044259-HUFA75623S3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52nC @ 20V
Max Input Capacitance: 790pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 64 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUFA75623S3ST - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUFA75623S3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUFA75623S3ST
MOSFET N-CH 100V 22A D2PAK

MOSFET N-CH 100V 22A D2PAK

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HUFA75623S3ST 1044259-HUFA75623S3ST HUFA75623S3ST
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75623S3ST Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
rDS(on) 0.0640 ohms
Package Type TO-263; TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts
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