onsemi Single FETs, MOSFETs HUFA75309T3ST

Description
N-Channel 55V 3A (Ta) 1.1W (Ta) Surface Mount SOT-223-4
Request a Quote Datasheet
Description
N-Channel 55V 3A (Ta) 1.1W (Ta) Surface Mount SOT-223-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HUFA75309T3ST-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUFA75309T3ST-ND
Single FETs, MOSFETs HUFA75309T3ST-ND
N-Channel 55V 3A (Ta) 1.1W (Ta) Surface Mount SOT-223-4

N-Channel 55V 3A (Ta) 1.1W (Ta) Surface Mount SOT-223-4

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75309T3ST - 204922-HUFA75309T3ST - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75309T3ST
204922-HUFA75309T3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75309T3ST 204922-HUFA75309T3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204922-HUFA75309T3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 23nC @ 20V Max Input Capacitance: 352pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 70 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204922-HUFA75309T3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 23nC @ 20V
Max Input Capacitance: 352pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 70 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - HUFA75309T3ST - Rochester Electronics
Newburyport, MA, United States
3A, 55V, 0.07ohm, N-Channel Power MOSFET

3A, 55V, 0.07ohm, N-Channel Power MOSFET

Supplier's Site Datasheet
Singapore
55V 3A MOSFET Transistor
278-HUFA75309T3ST
55V 3A MOSFET Transistor 278-HUFA75309T3ST
MOSFET N-CH 55V 3A SOT-223 Product overview: HUFA75309T3ST from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUFA75309T3ST can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 3A SOT-223 Product overview: HUFA75309T3ST from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUFA75309T3ST can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUFA75309T3ST - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUFA75309T3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUFA75309T3ST
MOSFET N-CH 55V 3A SOT223-4

MOSFET N-CH 55V 3A SOT223-4

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HUFA75309T3ST-ND 204922-HUFA75309T3ST HUFA75309T3ST 278-HUFA75309T3ST HUFA75309T3ST
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75309T3ST 55V 3A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223-4 SOT223; SOT-223 TO-261-4, TO-261AA
V(BR)DSS 55 volts
PD 1100 milliwatts 1100 milliwatts
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