Win Source Part Number: 1013963-HUF76645S3ST
Category: Discrete Semiconductor Products>Transistors
Series: UltraFET®
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 310W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: FAIFSCHUF76645S3ST,2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: RoHS non-compliant
75A, 100V, 0.015ohm, N-Channel Power MOSFET, TO-263AB
N-CHANNEL POWER MOSFET
| Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | RF Transistors |
| Product Number | 1013963-HUF76645S3ST | HUF76645S3ST | HUF76645S3ST |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | |
| QG | 153 nC | ||
| PD | 310000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |
