onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76639S3ST HUF76639S3ST

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 111012-HUF76639S3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 26 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 111012-HUF76639S3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 26 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76639S3ST - 111012-HUF76639S3ST - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76639S3ST
111012-HUF76639S3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76639S3ST 111012-HUF76639S3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 111012-HUF76639S3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 51A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 2400pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 26 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 111012-HUF76639S3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 26 mOhm @ 51A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
 - HUF76639S3ST - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 51A, 100V, 0.027ohm, N-Channel, MOSFET, TO-263AB

Power Field-Effect Transistor, 51A, 100V, 0.027ohm, N-Channel, MOSFET, TO-263AB

Supplier's Site Datasheet
Single FETs, MOSFETs - HUF76639S3STFSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF76639S3STFSDKR-ND
Single FETs, MOSFETs HUF76639S3STFSDKR-ND
N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - HUF76639S3STFSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF76639S3STFSCT-ND
Single FETs, MOSFETs HUF76639S3STFSCT-ND
N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - HUF76639S3STFSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF76639S3STFSTR-ND
Single FETs, MOSFETs HUF76639S3STFSTR-ND
N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
50A 100V 0.026 Ohm MOSFET Transistor
2088-HUF76639S3ST
50A 100V 0.026 Ohm MOSFET Transistor 2088-HUF76639S3ST
MOSFETs 50A 100V 0.026 Ohm Logic Level N-Ch Product overview: HUF76639S3ST from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50A, 100V, 0.026 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50A, 100V, 0.026 Ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-HUF76639S3ST can be used for catalog matching and distributor lookup.

MOSFETs 50A 100V 0.026 Ohm Logic Level N-Ch Product overview: HUF76639S3ST from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50A, 100V, 0.026 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50A, 100V, 0.026 Ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-HUF76639S3ST can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF76639S3ST - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF76639S3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF76639S3ST
MOSFET N-CH 100V 51A D2PAK

MOSFET N-CH 100V 51A D2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch

MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 111012-HUF76639S3ST HUF76639S3ST HUF76639S3STFSDKR-ND 2088-HUF76639S3ST HUF76639S3ST HUF76639S3ST
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76639S3ST Single FETs, MOSFETs 50A 100V 0.026 Ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 180000 milliwatts 180 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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