MOSFET N-CH 100V 38A D2PAK Product overview: HUF76633S3ST from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF76633S3ST can be used for catalog matching and distributor lookup.
N-Channel 100V 39A (Tc) 145W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: ON Semiconductor
Win Source Part Number: 848362-HUF76633S3ST
Series: UltraFET™
Features: 100 V
Package: Reel - TR
Part Status: Obsolete
Family Name: HUF76
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
39A, 100V, 0.037ohm, N-Channel Power MOSFET, TO-263AB
MOSFET N-CH 100V 38A D2PAK
MOSFET N-CH 100V 39A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-HUF76633S3ST | HUF76633S3ST-ND | 848362-HUF76633S3ST | HUF76633S3ST | 598-HUF76633S3ST | HUF76633S3ST |
| Product Name | 100V 38A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76633S3ST | MOSFET N-CH 100V 38A D2PAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| PD | 145000 milliwatts | 145000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3 | TO-263; TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| rDS(on) | 0.0370 ohms | 0.0350 ohms |
