onsemi Single FETs, MOSFETs HUF76619D3ST

Description
N-Channel 100V 18A (Tc) 75W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 100V 18A (Tc) 75W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HUF76619D3ST-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF76619D3ST-ND
Single FETs, MOSFETs HUF76619D3ST-ND
N-Channel 100V 18A (Tc) 75W (Tc) Surface Mount TO-252AA

N-Channel 100V 18A (Tc) 75W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76619D3ST - 122522-HUF76619D3ST - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76619D3ST
122522-HUF76619D3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76619D3ST 122522-HUF76619D3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 122522-HUF76619D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 767pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 85 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 122522-HUF76619D3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 767pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 85 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - HUF76619D3ST - Rochester Electronics
Newburyport, MA, United States
18A, 100V, 0.089ohm, N-Channel Power MOSFET, TO-252AA

18A, 100V, 0.089ohm, N-Channel Power MOSFET, TO-252AA

Supplier's Site Datasheet
Singapore
100V 18A DPAK MOSFET Transistor
278-HUF76619D3ST
100V 18A DPAK MOSFET Transistor 278-HUF76619D3ST
MOSFET N-CH 100V 18A DPAK Product overview: HUF76619D3ST from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 18A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 18A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF76619D3ST can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 18A DPAK Product overview: HUF76619D3ST from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 18A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 18A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF76619D3ST can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF76619D3ST - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF76619D3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF76619D3ST
MOSFET N-CH 100V 18A TO252AA

MOSFET N-CH 100V 18A TO252AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HUF76619D3ST-ND 122522-HUF76619D3ST HUF76619D3ST 278-HUF76619D3ST HUF76619D3ST
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76619D3ST 100V 18A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252AA TO-252 (DPAK); TO-252AA TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 100 volts
PD 75000 milliwatts 75000 milliwatts
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