MOSFET N-CH 60V 29A D2PAK Product overview: HUF76419S3ST from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF76419S3ST can be used for catalog matching and distributor lookup.
N-Channel 60V 29A (Tc) 75W (Tc) Surface Mount D²PAK (TO-263)
29A, 60V, 0.04ohm, N-Channel Power MOSFET, TO-263AB
Manufacturer: ON Semiconductor
Win Source Part Number: 738570-HUF76419S3ST
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 75W
Popularity: Low
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 29A
Rds On (Maximum) at Id, Vgs: 35mOhm at 29A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 28nC at 10V
Gate Source Voltage (Maximum): ±16V
Input Capacitance (Ciss) (Maximum) at Vds: 900pF at 25V
DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, SINGLE CHANNEL, N-CHANNEL, 60V DRAIN SOURCE BREAKDOWN, 29 AMP CONTINUOUS DRAIN, TO-263AB CASE. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 60V 29A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 278-HUF76419S3ST | HUF76419S3ST-ND | HUF76419S3ST | 738570-HUF76419S3ST | 119952207 | HUF76419S3ST |
| Product Name | 60V 29A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - HUF76419S3ST | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| PD | 75000 milliwatts | 75000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | Bulk | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Packing Method | Bulk | Tape Reel; Tape and Reel | Tape Reel; Tape & Reel (TR) |