onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76407DK8T HUF76407DK8T

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068308-HUF76407DK8T Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 60V Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 11.2nC @ 10V Max Input Capacitance: 330pF @ 25V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068308-HUF76407DK8T Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 60V Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 11.2nC @ 10V Max Input Capacitance: 330pF @ 25V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76407DK8T - 068308-HUF76407DK8T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76407DK8T
068308-HUF76407DK8T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76407DK8T 068308-HUF76407DK8T
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068308-HUF76407DK8T Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 60V Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 11.2nC @ 10V Max Input Capacitance: 330pF @ 25V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.8A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068308-HUF76407DK8T
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 60V
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11.2nC @ 10V
Max Input Capacitance: 330pF @ 25V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - HUF76407DK8T-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
HUF76407DK8T-ND
FET, MOSFET Arrays HUF76407DK8T-ND
Mosfet Array 2 N-Channel (Dual) 60V 2.5W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 2.5W Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF76407DK8T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF76407DK8T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF76407DK8T
MOSFET 2N-CH 60V 8SOIC

MOSFET 2N-CH 60V 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 068308-HUF76407DK8T HUF76407DK8T-ND HUF76407DK8T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76407DK8T FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 60 volts
PD 2500 milliwatts
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