Win Source Part Number: 965307-HUF76121S3ST
Category: Discrete Semiconductor Products>Transistors
Series: UltraFET™
Package: Bulk
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): ISL9N312AD3ST; ISL9N312AD3; FDP6035L; IRFZ44ZPBF; IPD060N03LGATMA1; FDD8880;
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: 2156-HUF76121S3ST,FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-CHANNEL POWER MOSFET
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Power MOSFET | RF Transistors |
| Product Number | 965307-HUF76121S3ST | HUF76121S3ST |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |
| QG | 30 nC | |
| PD | 75000 milliwatts |