onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single HUF76121S3ST

Description
Win Source Part Number: 965307-HUF76121S3ST Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: UltraFET™ Package: Bulk Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 75W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): ISL9N312AD3ST; ISL9N312AD3; FDP6035L; IRFZ44ZPBF; IPD060N03LGATMA1; FDD8880; ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: 2156-HUF76121S3ST,FA IFSCHUF76121S3ST Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 965307-HUF76121S3ST Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: UltraFET™ Package: Bulk Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 75W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): ISL9N312AD3ST; ISL9N312AD3; FDP6035L; IRFZ44ZPBF; IPD060N03LGATMA1; FDD8880; ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: 2156-HUF76121S3ST,FA IFSCHUF76121S3ST Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 965307-HUF76121S3ST - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
965307-HUF76121S3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 965307-HUF76121S3ST
Win Source Part Number: 965307-HUF76121S3ST Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: UltraFET™ Package: Bulk Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 75W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): ISL9N312AD3ST; ISL9N312AD3; FDP6035L; IRFZ44ZPBF; IPD060N03LGATMA1; FDD8880; ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Fairchild Semiconductor Other Names: 2156-HUF76121S3ST,FA IFSCHUF76121S3ST Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 965307-HUF76121S3ST
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: UltraFET™
Package: Bulk
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): ISL9N312AD3ST; ISL9N312AD3; FDP6035L; IRFZ44ZPBF; IPD060N03LGATMA1; FDD8880;
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Fairchild Semiconductor
Other Names: 2156-HUF76121S3ST,FAIFSCHUF76121S3ST
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF76121S3ST - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF76121S3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF76121S3ST
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET RF Transistors
Product Number 965307-HUF76121S3ST HUF76121S3ST
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
QG 30 nC
PD 75000 milliwatts
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