onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76013D3ST HUF76013D3ST

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040531-HUF76013D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 624pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 22 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040531-HUF76013D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 624pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 22 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76013D3ST - 040531-HUF76013D3ST - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76013D3ST
040531-HUF76013D3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76013D3ST 040531-HUF76013D3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040531-HUF76013D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 624pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 22 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040531-HUF76013D3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 624pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - HUF76013D3ST - Rochester Electronics
Newburyport, MA, United States
20A, 20V, N-Channel Power MOSFET, TO-252AA

20A, 20V, N-Channel Power MOSFET, TO-252AA

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF76013D3ST - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF76013D3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF76013D3ST
MOSFET N-CH 20V 20A TO252AA

MOSFET N-CH 20V 20A TO252AA

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 040531-HUF76013D3ST HUF76013D3ST HUF76013D3ST
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76013D3ST Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts
PD 50000 milliwatts
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