onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75831SK8T HUF75831SK8T

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044203-HUF75831SK8T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 80nC @ 20V Max Input Capacitance: 1175pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 95 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75831SK8T - 1044203-HUF75831SK8T - Win Source Electronics
    Win Source Electronics
  • HUF75831SK8T - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75831SK8T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044203-HUF75831SK8T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 80nC @ 20V Max Input Capacitance: 1175pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 95 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75831SK8T - 1044203-HUF75831SK8T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75831SK8T
1044203-HUF75831SK8T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75831SK8T 1044203-HUF75831SK8T
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044203-HUF75831SK8T Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 80nC @ 20V Max Input Capacitance: 1175pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 95 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044203-HUF75831SK8T
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 80nC @ 20V
Max Input Capacitance: 1175pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 95 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- HUF75831SK8T - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
HUF75831SK8T
HUF75831SK8T
3A, 150V, 0.095ohm, N-Channel Power MOSFET, MS-012AA

3A, 150V, 0.095ohm, N-Channel Power MOSFET, MS-012AA

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75831SK8T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75831SK8T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75831SK8T
MOSFET N-CH 150V 3A 8SOIC

MOSFET N-CH 150V 3A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 1044203-HUF75831SK8T HUF75831SK8T HUF75831SK8T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75831SK8T Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts
PD 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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