N-Channel UltraFET power MOSFET with 100 V drain-to-source voltage, 56 A continuous drain current, and 25 mΩ on-resistance at 10 V gate drive. Packaged in TO-263AB (D2PAK) with a thermal resistance junction-to-case of 0.74 °C/W. Features avalanche ruggedness, low reverse recovery charge, and operates from -55 °C to 175 °C.
56A, 100V, 0.025ohm, N-Channel Power MOSFET, TO-263AB
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | HUF75639S3STNL |
| Polarity | N-Channel |
