onsemi MOSFETs HUF75639P3

Description
MOSFET N-Channel 100V 56A TO220AB
Request a Quote Datasheet
Description
MOSFET N-Channel 100V 56A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 3291013 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
3291013
MOSFETs 3291013
MOSFET N-Channel 100V 56A TO220AB

MOSFET N-Channel 100V 56A TO220AB

Supplier's Site
MOSFETs - 3291013P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
3291013P
MOSFETs 3291013P
MOSFET N-Channel 100V 56A TO220AB

MOSFET N-Channel 100V 56A TO220AB

Supplier's Site
MOSFETs - 1241674 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1241674
MOSFETs 1241674
MOSFET N-Channel 100V 56A TO220AB

MOSFET N-Channel 100V 56A TO220AB

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75639P3 - 068301-HUF75639P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75639P3
068301-HUF75639P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75639P3 068301-HUF75639P3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068301-HUF75639P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 20V Max Input Capacitance: 2000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 56A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068301-HUF75639P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 20V
Max Input Capacitance: 2000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 56A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - HUF75639P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75639P3-ND
Single FETs, MOSFETs HUF75639P3-ND
N-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-220-3

N-Channel 100V 56A (Tc) 200W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Singapore, Singapore
56a 100V 0.025 Ohm MOSFET Transistor
2088-HUF75639P3
56a 100V 0.025 Ohm MOSFET Transistor 2088-HUF75639P3
MOSFETs 56a 100V N-Ch UltraFET 0.025 Ohm Product overview: HUF75639P3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 56a, 100V, 0.025 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 56a, 100V, 0.025 Ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-HUF75639P3 can be used for catalog matching and distributor lookup.

MOSFETs 56a 100V N-Ch UltraFET 0.025 Ohm Product overview: HUF75639P3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 56a, 100V, 0.025 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 56a, 100V, 0.025 Ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-HUF75639P3 can be used for catalog matching and distributor lookup.

Supplier's Site
 - HUF75639P3 - Rochester Electronics
Newburyport, MA, United States
HUF75639P3 - N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mOhm

HUF75639P3 - N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mOhm

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm

MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm

Buy Now Datasheet
N Channel Mosfet, 100V, 56A, To-220Ab; Channel Type Onsemi - 58K1612 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 56A, To-220Ab; Channel Type Onsemi
58K1612
N Channel Mosfet, 100V, 56A, To-220Ab; Channel Type Onsemi 58K1612
N CHANNEL MOSFET, 100V, 56A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 56A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:56A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75639P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75639P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75639P3
MOSFET N-CH 100V 56A TO220-3

MOSFET N-CH 100V 56A TO220-3

Supplier's Site

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 3291013 3291013P 068301-HUF75639P3 HUF75639P3-ND 2088-HUF75639P3 HUF75639P3 HUF75639P3 58K1612 HUF75639P3
Product Name MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75639P3 Single FETs, MOSFETs 56a 100V 0.025 Ohm MOSFET Transistor MOSFET N Channel Mosfet, 100V, 56A, To-220Ab; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
Package Type TO-220; To-220ab TO-220; TO-220 TO-220; SOT3; TO-220AB TO-220; TO-220-3 Tube TO-220; TO-220-JDEC TO-3; TO-220 TO-220; TO-220-3
Number of units in IC 1
V(BR)DSS 100 volts
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