onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75631SK8 HUF75631SK8

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068297-HUF75631SK8
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 79nC @ 20V
Max Input Capacitance: 1225pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 39 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

N-CHANNEL POWER MOSFET Product overview: HUF75631SK8 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75631SK8 can be used for catalog matching and distributor lookup.

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