Manufacturer: ON Semiconductor
Win Source Part Number: 813127-HUF75631S3S
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Part Status: Obsolete (End Of Life)
Supplier Device Package: D2PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 120W (Tc)
Popularity: Low
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 400
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 40mOhm at 33A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 79nC at 20V
Input Capacitance (Ciss) (Maximum) at Vds: 1220pF at 25V
Current - Continuous Drain (Id) at 25°C: 33A (Tc)
Vgs(th) (Maximum) at Id: 4V at 250μA
Maximum Vgs: ±20V
N-Channel 100V 33A (Tc) 120W (Tc) Surface Mount D²PAK (TO-263)
N-Channel UltraFET Power MOSFET 100V, 33A, 40m??
MOSFET N-CH 100V 33A D2PAK
MOSFET N-CH 100V 33A D2PAK
| Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 813127-HUF75631S3S | HUF75631S3S-ND | HUF75631S3S | HUF75631S3S | 598-HUF75631S3S |
| Product Name | FETs - Single - HUF75631S3S | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 100V 33A D2PAK | |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| PD | 120000 milliwatts | 120000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Packing Method | Tube; Tube | Tube; Tube | Tube; Tube |
