Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040529-HUF75623P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52nC @ 20V
Max Input Capacitance: 790pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 64 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control, Audio
N-Channel 100V 22A (Tc) 85W (Tc) Through Hole TO-220-3
22A, 100V, 0.064ohm, N-Channel Power MOSFET, TO-220AB
MOSFET N-CH 100V 22A TO220-3
| Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors |
| Product Number | 040529-HUF75623P3 | HUF75623P3-ND | HUF75623P3 | HUF75623P3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75623P3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| V(BR)DSS | 100 volts | |||
| PD | 85000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) |
