Power Field-Effect Transistor, 75A, 80V, 0.014ohm, N-Channel, MOSFET, TO-220AB
Power Field-Effect Transistor, 75A, 80V, 0.014ohm, N-Channel, MOSFET, TO-220AB
N-Channel 80V 75A (Tc) 230W (Tc) Through Hole TO-220-3
POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: HUF75542P3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75542P3 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044192-HUF75542P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 180nC @ 20V
Max Input Capacitance: 2750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800
MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm
N CHANNEL MOSFET, 80V, 75A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 80V 75A TO220-3
| Rochester Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | HUF75542P3 | HUF75542P3-ND | 278-HUF75542P3 | 1044192-HUF75542P3 | HUF75542P3 | 58K1609 | HUF75542P3 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75542P3 | MOSFET | N Channel Mosfet, 80V, 75A To-220Ab; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| rDS(on) | 0.0140 ohms | ||||||
| Package Type | TO-220; TO-220-JDEC | TO-220; TO-220-3 | Bulk | TO-220; SOT3; TO-220AB | TO-3; TO-220 | TO-220; TO-220-3 | |
| Packing Method | Tube; Tube | Bulk | Rail; Tube; Tube/Rail | Tube; Tube | |||
| MOSFET Operating Mode | Enhancement |
