onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75542P3 HUF75542P3

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044192-HUF75542P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 180nC @ 20V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75542P3 - 1044192-HUF75542P3 - Win Source Electronics
    Win Source Electronics
  • HUF75542P3 - Rochester Electronics
    Rochester Electronics
  • HUF75542P3 - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - HUF75542P3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75542P3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 80V, 75A To-220Ab; Channel Type Onsemi - 58K1609 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044192-HUF75542P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 180nC @ 20V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75542P3 - 1044192-HUF75542P3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75542P3
1044192-HUF75542P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75542P3 1044192-HUF75542P3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044192-HUF75542P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 180nC @ 20V Max Input Capacitance: 2750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044192-HUF75542P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 180nC @ 20V
Max Input Capacitance: 2750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800

Buy Now Datasheet
- HUF75542P3 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
HUF75542P3
HUF75542P3
Power Field-Effect Transistor, 75A, 80V, 0.014ohm, N-Channel, MOSFET, TO-220AB

Power Field-Effect Transistor, 75A, 80V, 0.014ohm, N-Channel, MOSFET, TO-220AB

Supplier's Site Datasheet
- HUF75542P3 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
HUF75542P3
HUF75542P3
Power Field-Effect Transistor, 75A, 80V, 0.014ohm, N-Channel, MOSFET, TO-220AB

Power Field-Effect Transistor, 75A, 80V, 0.014ohm, N-Channel, MOSFET, TO-220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - HUF75542P3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75542P3-ND
Single FETs, MOSFETs HUF75542P3-ND
N-Channel 80V 75A (Tc) 230W (Tc) Through Hole TO-220-3

N-Channel 80V 75A (Tc) 230W (Tc) Through Hole TO-220-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
278-HUF75542P3
MOSFET Transistor 278-HUF75542P3
POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: HUF75542P3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75542P3 can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 7 Product overview: HUF75542P3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75542P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75542P3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75542P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75542P3
MOSFET N-CH 80V 75A TO220-3

MOSFET N-CH 80V 75A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
HUF75542P3
MOSFET HUF75542P3
MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm

MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm

Buy Now Datasheet
N Channel Mosfet, 80V, 75A To-220Ab; Channel Type Onsemi - 58K1609 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 80V, 75A To-220Ab; Channel Type Onsemi
58K1609
N Channel Mosfet, 80V, 75A To-220Ab; Channel Type Onsemi 58K1609
N CHANNEL MOSFET, 80V, 75A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 80V, 75A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1044192-HUF75542P3 HUF75542P3 HUF75542P3-ND 278-HUF75542P3 HUF75542P3 HUF75542P3 58K1609
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75542P3 Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 80V, 75A To-220Ab; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 80 volts
PD 230000 milliwatts 230 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-JDEC TO-220; TO-220-3 Bulk TO-220; TO-220-3 TO-3; TO-220
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