onsemi Single FETs, MOSFETs HUF75333S3

Description
N-Channel 55V 66A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet
Description
N-Channel 55V 66A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HUF75333S3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75333S3-ND
Single FETs, MOSFETs HUF75333S3-ND
N-Channel 55V 66A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)

N-Channel 55V 66A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75333S3 - 766127-HUF75333S3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75333S3
766127-HUF75333S3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75333S3 766127-HUF75333S3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 766127-HUF75333S3 Series: UltraFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Part Status: Obsolete(EOL) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-262AA Channel Type Type: N Drain Source Voltage: 55V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 85nC @ 20V Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 66A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 766127-HUF75333S3
Series: UltraFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-262AA
Channel Type Type: N
Drain Source Voltage: 55V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 85nC @ 20V
Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 66A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
 - HUF75333S3 - Rochester Electronics
Newburyport, MA, United States
N-Channel, ULTRAFET POWER MOSFET

N-Channel, ULTRAFET POWER MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75333S3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75333S3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75333S3
MOSFET N-CH 55V 66A I2PAK

MOSFET N-CH 55V 66A I2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number HUF75333S3-ND 766127-HUF75333S3 HUF75333S3 HUF75333S3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75333S3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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