onsemi HUF75332P3_NL

Description
60A, 55V, 0.019ohm, N-Channel Power MOSFET, TO-220AB
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Description
60A, 55V, 0.019ohm, N-Channel Power MOSFET, TO-220AB
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Datasheet
Datasheet Summary
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The HUF75332P3 is an N-channel UltraFET power MOSFET rated for 55 V drain-to-source voltage and 60 A continuous drain current, with a maximum on-resistance of 0.019 Ω at 10 V gate drive. It is packaged in a TO-220AB case and has a thermal resistance junction-to-case of 1.03 °C/W. The device supports pulsed current operation, avalanche energy absorption, and features low reverse recovery time and charge in its body diode. Operating and storage junction temperatures range from -55 °C to 175 °C.

Datasheet Summary
Powered by GS/AI

The HUF75332P3 is an N-channel UltraFET power MOSFET rated for 55 V drain-to-source voltage and 60 A continuous drain current, with a maximum on-resistance of 0.019 Ω at 10 V gate drive. It is packaged in a TO-220AB case and has a thermal resistance junction-to-case of 1.03 °C/W. The device supports pulsed current operation, avalanche energy absorption, and features low reverse recovery time and charge in its body diode. Operating and storage junction temperatures range from -55 °C to 175 °C.

Suppliers

Company
Product
Description
Supplier Links
 - HUF75332P3_NL - Rochester Electronics
Newburyport, MA, United States
60A, 55V, 0.019ohm, N-Channel Power MOSFET, TO-220AB

60A, 55V, 0.019ohm, N-Channel Power MOSFET, TO-220AB

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number HUF75332P3_NL
Polarity N-Channel
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