onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75329S3 HUF75329S3

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068288-HUF75329S3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 128W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 49A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 75nC @ 20V Max Input Capacitance: 1060pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 49A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068288-HUF75329S3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 128W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 49A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 75nC @ 20V Max Input Capacitance: 1060pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 49A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75329S3 - 068288-HUF75329S3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75329S3
068288-HUF75329S3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75329S3 068288-HUF75329S3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068288-HUF75329S3 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 128W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 49A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 75nC @ 20V Max Input Capacitance: 1060pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 49A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068288-HUF75329S3
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 128W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 49A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 75nC @ 20V
Max Input Capacitance: 1060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 49A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
55V 49A MOSFET Transistor
285-HUF75329S3
55V 49A MOSFET Transistor 285-HUF75329S3
MOSFET N-CH 55V 49A D2PAK Product overview: HUF75329S3 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 49A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 49A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-HUF75329S3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 49A D2PAK Product overview: HUF75329S3 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 49A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 49A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-HUF75329S3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - HUF75329S3 - Rochester Electronics
Newburyport, MA, United States
42A, 55V, 0.025ohm, N-Channel Power MOSFET, TO-262AA

42A, 55V, 0.025ohm, N-Channel Power MOSFET, TO-262AA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number 068288-HUF75329S3 285-HUF75329S3 HUF75329S3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75329S3 55V 49A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 55 volts
PD 128000 milliwatts 128000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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