MOSFET N-CH 55V 49A D2PAK Product overview: HUF75329S3 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 49A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 49A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-HUF75329S3 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068288-HUF75329S3
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 128W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 49A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 75nC @ 20V
Max Input Capacitance: 1060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 49A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
42A, 55V, 0.025ohm, N-Channel Power MOSFET, TO-262AA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 285-HUF75329S3 | 068288-HUF75329S3 | HUF75329S3 |
| Product Name | 55V 49A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75329S3 | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel |
| PD | 128000 milliwatts | 128000 milliwatts | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |
| Package Type | Tube/Rail | TO-263; SOT3; D2PAK (TO-263AB) | TO-262AA |