onsemi FETs - Single - HUF75329D3 HUF75329D3

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1182429-HUF75329D3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 128W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 20A Rds On (Maximum) at Id, Vgs: 26mOhm at 20A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 65nC at 20V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1060pF at 25V
  • FETs - Single - HUF75329D3 - 1182429-HUF75329D3 - Win Source Electronics
    Win Source Electronics
  • HUF75329D3 - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75329D3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1182429-HUF75329D3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 128W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 20A Rds On (Maximum) at Id, Vgs: 26mOhm at 20A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 65nC at 20V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1060pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - HUF75329D3 - 1182429-HUF75329D3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - HUF75329D3
1182429-HUF75329D3
FETs - Single - HUF75329D3 1182429-HUF75329D3
Manufacturer: ON Semiconductor Win Source Part Number: 1182429-HUF75329D3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 128W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,800 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 20A Rds On (Maximum) at Id, Vgs: 26mOhm at 20A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 65nC at 20V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1060pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1182429-HUF75329D3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 128W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,800
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 20A
Rds On (Maximum) at Id, Vgs: 26mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 65nC at 20V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1060pF at 25V

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- HUF75329D3 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
HUF75329D3
HUF75329D3
20A, 55V, 0.026ohm, N-Channel Power MOSFET, TO-251AA

20A, 55V, 0.026ohm, N-Channel Power MOSFET, TO-251AA

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75329D3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75329D3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75329D3
MOSFET N-CH 55V 20A IPAK

MOSFET N-CH 55V 20A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Power MOSFET RF Transistors
Product Number 1182429-HUF75329D3 HUF75329D3 HUF75329D3
Product Name FETs - Single - HUF75329D3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts
QG 65 nC
PD 128000 milliwatts
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