Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068287-HUF75321S3S
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 93W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 44nC @ 20V
Max Input Capacitance: 680pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 34 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
N-Channel ULTRAFET POWER MOSFET
N-Channel 55V 35A (Tc) 93W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 55V 35A D2PAK
MOSFET N-CH 55V 35A D2PAK
| Win Source Electronics | Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 068287-HUF75321S3S | HUF75321S3S | HUF75321S3S-ND | HUF75321S3S | 598-HUF75321S3S |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75321S3S | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 55V 35A D2PAK | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 55 volts | 55 volts | |||
| PD | 93000 milliwatts | 93000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
