IGBT 600V 14A 60W TO220AB Product overview: HGTP7N60C3D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14A, 60W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 14A, 60W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP7N60C3D can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1043314-HGTP7N60C3D
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 23nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-220AB
Maximum Current Collector: 14A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 56A
Collector-emitter saturation voltage(Max): 2V @ 15V, 7A
Total Switching Energy(Ets): 165μJ (on), 600μJ (off)
Testing Conditions: 480V, 7A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
IGBT 600V 14A 60W Through Hole TO-220-3
IGBT 600V 14A 60W TO220AB
SINGLE IGBT, 600V, 14A; Continuous Collector Current:14A; Power Dissipation:60W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 14A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB, G7N60C3D. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | 279-HGTP7N60C3D | 1043314-HGTP7N60C3D | HGTP7N60C3D-ND | HGTP7N60C3D | 58K8906 | 16115722 |
| Product Name | 600V 14A 60W IGBT Transistor | IGBTs - Single - HGTP7N60C3D | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Single Igbt, 600V, 14A; Continuous Collector Current Onsemi | Transistor |
| PD | 60000 milliwatts | 60000 milliwatts | 60000 milliwatts |