onsemi 600V 14A 60W IGBT Transistor HGTP7N60C3D

Description
IGBT 600V 14A 60W TO220AB Product overview: HGTP7N60C3D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14A, 60W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 14A, 60W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP7N60C3D can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
IGBT 600V 14A 60W TO220AB Product overview: HGTP7N60C3D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14A, 60W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 14A, 60W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP7N60C3D can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
600V 14A 60W IGBT Transistor
279-HGTP7N60C3D
600V 14A 60W IGBT Transistor 279-HGTP7N60C3D
IGBT 600V 14A 60W TO220AB Product overview: HGTP7N60C3D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14A, 60W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 14A, 60W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP7N60C3D can be used for catalog matching and distributor lookup.

IGBT 600V 14A 60W TO220AB Product overview: HGTP7N60C3D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14A, 60W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 14A, 60W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP7N60C3D can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - HGTP7N60C3D - 1043314-HGTP7N60C3D - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - HGTP7N60C3D
1043314-HGTP7N60C3D
IGBTs - Single - HGTP7N60C3D 1043314-HGTP7N60C3D
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1043314-HGTP7N60C3D Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 23nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: TO-220AB Maximum Current Collector: 14A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 60W Pulsed Collector Current: 56A Collector-emitter saturation voltage(Max): 2V @ 15V, 7A Total Switching Energy(Ets): 165μJ (on), 600μJ (off) Testing Conditions: 480V, 7A, 50 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1043314-HGTP7N60C3D
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 23nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: TO-220AB
Maximum Current Collector: 14A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 56A
Collector-emitter saturation voltage(Max): 2V @ 15V, 7A
Total Switching Energy(Ets): 165μJ (on), 600μJ (off)
Testing Conditions: 480V, 7A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single IGBTs - HGTP7N60C3D-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
HGTP7N60C3D-ND
Single IGBTs HGTP7N60C3D-ND
IGBT 600V 14A 60W Through Hole TO-220-3

IGBT 600V 14A 60W Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - HGTP7N60C3D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
HGTP7N60C3D
Discrete Semiconductor Products - Transistors - IGBTs HGTP7N60C3D
IGBT 600V 14A 60W TO220AB

IGBT 600V 14A 60W TO220AB

Supplier's Site
Single Igbt, 600V, 14A; Continuous Collector Current Onsemi - 58K8906 - Newark, An Avnet Company
Chicago, IL, United States
Single Igbt, 600V, 14A; Continuous Collector Current Onsemi
58K8906
Single Igbt, 600V, 14A; Continuous Collector Current Onsemi 58K8906
SINGLE IGBT, 600V, 14A; Continuous Collector Current:14A; Power Dissipation:60W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes

SINGLE IGBT, 600V, 14A; Continuous Collector Current:14A; Power Dissipation:60W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes

Supplier's Site
Transistor - 16115722 - Radwell International
Willingboro, NJ, United States
Transistor
16115722
Transistor 16115722
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 14A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB, G7N60C3D. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 14A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB, G7N60C3D. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Radwell International
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors
Product Number 279-HGTP7N60C3D 1043314-HGTP7N60C3D HGTP7N60C3D-ND HGTP7N60C3D 58K8906 16115722
Product Name 600V 14A 60W IGBT Transistor IGBTs - Single - HGTP7N60C3D Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs Single Igbt, 600V, 14A; Continuous Collector Current Onsemi Transistor
PD 60000 milliwatts 60000 milliwatts 60000 milliwatts
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