onsemi IGBT Transistor HGTP7N60B3D

N-Channel Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor Product overview: HGTP7N60B3D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP7N60B3D can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040495-HGTP7N60B3D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 37ns
Input Type: Standard
Gate Charge: 23nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 14A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 56A
Collector-emitter saturation voltage(Max): 2.1V @ 15V, 7A
Total Switching Energy(Ets): 160μJ (on), 120μJ (off)
Turn-on and Turn-off delay time: 26ns/130ns
Testing Conditions: 480V, 7A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

IGBT 600V 14A 60W Through Hole TO-220-3