onsemi IGBTs - Single - HGTP7N60A4 HGTP7N60A4

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 140996-HGTP7N60A4 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 37nC Family Name: HGTP7N60A4 Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 34A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 56A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 7A Total Switching Energy(Ets): 55μJ (on), 60μJ (off) Turn-on and Turn-off delay time: 11ns/100ns Testing Conditions: 390V, 7A, 25 Ohm, 15V Alternative Parts (Cross-Reference): IRG4BC30S; AP20GT60ASP-HF; IRGB4061DPBF; IRG4BC30SPbF; Introduction Date: January 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 800
  • IGBTs - Single - HGTP7N60A4 - 140996-HGTP7N60A4 - Win Source Electronics
    Win Source Electronics
  • Single IGBTs - HGTP7N60A4-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - IGBTs - HGTP7N60A4 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single IGBTs - HGTP7N60A4 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Igbt Single Transistor, 34 A, 2.7 V, 125 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi - 97K1406 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 140996-HGTP7N60A4 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 37nC Family Name: HGTP7N60A4 Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 34A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 56A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 7A Total Switching Energy(Ets): 55μJ (on), 60μJ (off) Turn-on and Turn-off delay time: 11ns/100ns Testing Conditions: 390V, 7A, 25 Ohm, 15V Alternative Parts (Cross-Reference): IRG4BC30S; AP20GT60ASP-HF; IRGB4061DPBF; IRG4BC30SPbF; Introduction Date: January 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - HGTP7N60A4 - 140996-HGTP7N60A4 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - HGTP7N60A4
140996-HGTP7N60A4
IGBTs - Single - HGTP7N60A4 140996-HGTP7N60A4
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 140996-HGTP7N60A4 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 37nC Family Name: HGTP7N60A4 Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 34A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 125W Pulsed Collector Current: 56A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 7A Total Switching Energy(Ets): 55μJ (on), 60μJ (off) Turn-on and Turn-off delay time: 11ns/100ns Testing Conditions: 390V, 7A, 25 Ohm, 15V Alternative Parts (Cross-Reference): IRG4BC30S; AP20GT60ASP-HF; IRGB4061DPBF; IRG4BC30SPbF; Introduction Date: January 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 140996-HGTP7N60A4
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 37nC
Family Name: HGTP7N60A4
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 34A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 125W
Pulsed Collector Current: 56A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 7A
Total Switching Energy(Ets): 55μJ (on), 60μJ (off)
Turn-on and Turn-off delay time: 11ns/100ns
Testing Conditions: 390V, 7A, 25 Ohm, 15V
Alternative Parts (Cross-Reference): IRG4BC30S; AP20GT60ASP-HF; IRGB4061DPBF; IRG4BC30SPbF;
Introduction Date: January 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single IGBTs - HGTP7N60A4-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
HGTP7N60A4-ND
Single IGBTs HGTP7N60A4-ND
IGBT 600V 34A 125W Through Hole TO-220-3

IGBT 600V 34A 125W Through Hole TO-220-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Through-Hole 600V 34A IGBT Transistor
279-HGTP7N60A4
Through-Hole 600V 34A IGBT Transistor 279-HGTP7N60A4
600V 34A IGBT TO-220AB Through Hole Power Transistor Product overview: HGTP7N60A4 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 34A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 600V, 34A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP7N60A4 can be used for catalog matching and distributor lookup.

600V 34A IGBT TO-220AB Through Hole Power Transistor Product overview: HGTP7N60A4 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 34A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 600V, 34A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP7N60A4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - HGTP7N60A4 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
HGTP7N60A4
Discrete Semiconductor Products - Transistors - IGBTs HGTP7N60A4
IGBT 600V 34A TO220-3

IGBT 600V 34A TO220-3

Supplier's Site
Single IGBTs - HGTP7N60A4 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
HGTP7N60A4
Single IGBTs HGTP7N60A4
IGBT 600V 34A TO220-3

IGBT 600V 34A TO220-3

Supplier's Site Datasheet
Igbt Single Transistor, 34 A, 2.7 V, 125 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi - 97K1406 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, 34 A, 2.7 V, 125 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi
97K1406
Igbt Single Transistor, 34 A, 2.7 V, 125 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi 97K1406
IGBT Single Transistor, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes

IGBT Single Transistor, 34 A, 2.7 V, 125 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 140996-HGTP7N60A4 HGTP7N60A4-ND 279-HGTP7N60A4 HGTP7N60A4 HGTP7N60A4 97K1406
Product Name IGBTs - Single - HGTP7N60A4 Single IGBTs Through-Hole 600V 34A IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs Single IGBTs Igbt Single Transistor, 34 A, 2.7 V, 125 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi
VCE(on) 2.7 volts
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