IGBT 1200V 21A 167W TO220AB
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040494-HGTP5N120BND
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 65ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 53nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 21A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 5A
Total Switching Energy(Ets): 450μJ (on), 390μJ (off)
Turn-on and Turn-off delay time: 22ns/160ns
Testing Conditions: 960V, 5A, 25 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
Quantity per package: 800
IGBT NPT 1200V 21A 167W Through Hole TO-220-3
1200V NPT IGBT, 21A, 167W, TO-220 Product overview: HGTP5N120BND from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 21A, 167W, TO-220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 21A, 167W, TO-220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP5N120BND can be used for catalog matching and distributor lookup.
IGBT 1200V 21A 167W TO220AB
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | HGTP5N120BND | 040494-HGTP5N120BND | HGTP5N120BND-ND | 279-HGTP5N120BND | HGTP5N120BND |
| Product Name | Single IGBTs | IGBTs - Single - HGTP5N120BND | Single IGBTs | 1200V 21A 167W TO-220 IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | ||
| VCE(on) | 2.7 volts |
