onsemi IGBTs - Single - HGTP3N60A4D HGTP3N60A4D

Insulated Gate Bipolar Transistor, 17A, 600V, N-Channel, TO-220AB

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001579-HGTP3N60A4D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 29ns
Input Type: Standard
Gate Charge: 21nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 17A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 70W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 3A
Total Switching Energy(Ets): 37μJ (on), 25μJ (off)
Turn-on and Turn-off delay time: 6ns/73ns
Testing Conditions: 390V, 3A, 50 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

N-CHANNEL IGBT Product overview: HGTP3N60A4D from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP3N60A4D can be used for catalog matching and distributor lookup.