onsemi Single IGBTs HGTP3N60A4

Description
IGBT 600V 17A 70W Through Hole TO-220-3
Request a Quote Datasheet
Description
IGBT 600V 17A 70W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - HGTP3N60A4-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
HGTP3N60A4-ND
Single IGBTs HGTP3N60A4-ND
IGBT 600V 17A 70W Through Hole TO-220-3

IGBT 600V 17A 70W Through Hole TO-220-3

Buy Now Datasheet
 - HGTP3N60A4 - Rochester Electronics
Newburyport, MA, United States
HGTP3N60A4 - N-Channel Insulated Gate Bipolar Transistor

HGTP3N60A4 - N-Channel Insulated Gate Bipolar Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - HGTP3N60A4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
HGTP3N60A4
Discrete Semiconductor Products - Transistors - IGBTs HGTP3N60A4
IGBT 600V 17A 70W TO220AB

IGBT 600V 17A 70W TO220AB

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Bipolar RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number HGTP3N60A4-ND HGTP3N60A4 HGTP3N60A4
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data