IGBT NPT 1200V 13A 104W Through Hole TO-220-3
IGBT 1200V 13A 104W TO220AB
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 134050-HGTP2N120CN
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 30nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 13A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 104W
Pulsed Collector Current: 20A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 2.6A
Total Switching Energy(Ets): 96μJ (on), 355μJ (off)
Turn-on and Turn-off delay time: 25ns/205ns
Testing Conditions: 960V, 2.6A, 51 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
IGBT 1200V 13A 104W TO220AB
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | HGTP2N120CN-ND | HGTP2N120CN | 134050-HGTP2N120CN | HGTP2N120CN |
| Product Name | Single IGBTs | Single IGBTs | IGBTs - Single - HGTP2N120CN | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube |
