onsemi Single IGBTs HGTP20N60A4

Description
IGBT 600V 70A 290W Through Hole TO-220-3
Request a Quote Datasheet
Description
IGBT 600V 70A 290W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - HGTP20N60A4-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
HGTP20N60A4-ND
Single IGBTs HGTP20N60A4-ND
IGBT 600V 70A 290W Through Hole TO-220-3

IGBT 600V 70A 290W Through Hole TO-220-3

Buy Now Datasheet
 - HGTP20N60A4 - Rochester Electronics
Newburyport, MA, United States
600V, SMPS IGBT

600V, SMPS IGBT

Supplier's Site Datasheet
IGBTs - Single - HGTP20N60A4 - 1043310-HGTP20N60A4 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - HGTP20N60A4
1043310-HGTP20N60A4
IGBTs - Single - HGTP20N60A4 1043310-HGTP20N60A4
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1043310-HGTP20N60A4 Packaging: Tube/Rail Mounting: Through Hole Input Type: Standard Gate Charge: 142nC Family Name: HGTP20N60A4 Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 70A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 290W Pulsed Collector Current: 280A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 20A Total Switching Energy(Ets): 105μJ (on), 150μJ (off) Turn-on and Turn-off delay time: 15ns/73ns Testing Conditions: 390V, 20A, 3 Ohm, 15V Alternative Parts (Cross-Reference): IXGP30N60B2; STGP30V60DF; STGP30H60DF; STGP30H65DFB2; Introduction Date: January 08, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1043310-HGTP20N60A4
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 142nC
Family Name: HGTP20N60A4
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 70A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 290W
Pulsed Collector Current: 280A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 20A
Total Switching Energy(Ets): 105μJ (on), 150μJ (off)
Turn-on and Turn-off delay time: 15ns/73ns
Testing Conditions: 390V, 20A, 3 Ohm, 15V
Alternative Parts (Cross-Reference): IXGP30N60B2; STGP30V60DF; STGP30H60DF; STGP30H65DFB2;
Introduction Date: January 08, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
600V 70A TO-220 IGBT Transistor
279-HGTP20N60A4
600V 70A TO-220 IGBT Transistor 279-HGTP20N60A4
600V 70A IGBT Transistor TO-220 Product overview: HGTP20N60A4 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 70A, TO-220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 70A, TO-220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP20N60A4 can be used for catalog matching and distributor lookup.

600V 70A IGBT Transistor TO-220 Product overview: HGTP20N60A4 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 70A, TO-220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 70A, TO-220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP20N60A4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - HGTP20N60A4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
HGTP20N60A4
Discrete Semiconductor Products - Transistors - IGBTs HGTP20N60A4
IGBT 600V 70A TO220-3

IGBT 600V 70A TO220-3

Supplier's Site
Single IGBTs - HGTP20N60A4 - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
HGTP20N60A4
Single IGBTs HGTP20N60A4
IGBT 600V 70A TO220-3

IGBT 600V 70A TO220-3

Supplier's Site Datasheet

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number HGTP20N60A4-ND HGTP20N60A4 1043310-HGTP20N60A4 279-HGTP20N60A4 HGTP20N60A4 HGTP20N60A4
Product Name Single IGBTs IGBTs - Single - HGTP20N60A4 600V 70A TO-220 IGBT Transistor Discrete Semiconductor Products - Transistors - IGBTs Single IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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