IGBT 600V 24A 104W Through Hole TO-220-3
600V 24A N-CH IGBT TO-220 Transistor Product overview: HGTP12N60C3D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 24A, TO-220. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 24A, TO-220. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP12N60C3D can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1043309-HGTP12N60C3D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 40ns
Input Type: Standard
Gate Charge: 48nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 24A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 104W
Pulsed Collector Current: 96A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 15A
Total Switching Energy(Ets): 380μJ (on), 900μJ (off)
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800
IGBT 600V 24A TO220-3
INSULATED GATE BIPOLAR TRANSISTOR, 24A I(C), 600V V(BR)CES, N-CHANNEL, WITH BUILT IN DIODE, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
SINGLE IGBT, 600V, 24A; Continuous Collector Current:24A; Power Dissipation:104W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
IGBT Transistors HGTP12N60C3D
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | HGTP12N60C3D-ND | 279-HGTP12N60C3D | 1043309-HGTP12N60C3D | HGTP12N60C3D | HGTP12N60C3D | 16115706 | 58K1596 | HGTP12N60C3D |
| Product Name | Single IGBTs | 600V 24A TO-220 IGBT Transistor | IGBTs - Single - HGTP12N60C3D | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT | Single Igbt, 600V, 24A; Continuous Collector Current Onsemi | IGBT Transistors |
| TJ | -40 to 150 C (-40 to 302 F) | -40 C (-40 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ? to 150 C (? to 302 F) |
