onsemi Single IGBTs HGTP10N120BN

IGBT NPT 1200V 35A 298W Through Hole TO-220-3

1.2kV NPT IGBT, 35A, TO-220AB, Through Hole Product overview: HGTP10N120BN from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 1.2kV, 35A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 1.2kV, 35A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTP10N120BN can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1043308-HGTP10N120BN
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT
Input Type: Standard
Gate Charge: 100nC
Family Name: HGTP10N120BN
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 35A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 298W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 10A
Total Switching Energy(Ets): 320μJ (on), 800μJ (off)
Turn-on and Turn-off delay time: 23ns/165ns
Testing Conditions: 960V, 10A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): APT20GF120KRG; IXGP20N120B3; IXYP20N120C3;
Introduction Date: January 08, 2002
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 800