1200V IGBT, 21A, TO-247, 167W Product overview: HGTG5N120BND from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 21A, 167W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 21A, 167W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTG5N120BND can be used for catalog matching and distributor lookup.
IGBT NPT 1200V 21A 167W Through Hole TO-247-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 006331-HGTG5N120BND
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 65ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 53nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 21A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 40A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 5A
Total Switching Energy(Ets): 450μJ (on), 390μJ (off)
Turn-on and Turn-off delay time: 22ns/160ns
Testing Conditions: 960V, 5A, 25 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 450
Insulated Gate Bipolar Transistor, 21A, 1200V, N-Channel, TO-247
IGBT NPT 1200V 21A TO247-3
167W 21A 1.2kV NPT(非穿通型) TO-247-3 IGBTs ROHS
FAIRCHILD SEMICONDUCTOR HGTG5N120BND IGBT Single Transistor, 21 A, 2.7 V, 167 W, 1.2 kV, TO-247, 3 Pins
SINGLE IGBT, 1.2KV, 21A; Continuous Collector Current:21A; Power Dissipation:167W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
IGBT NPT 1200V 21A TO247-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-HGTG5N120BND | HGTG5N120BNDFS-ND | 006331-HGTG5N120BND | HGTG5N120BND | HGTG5N120BND | HGTG5N120BND | 598-HGTG5N120BND | 98B1932 | HGTG5N120BND | HGTG5N120BND |
| Product Name | 1200V 21A 167W IGBT Transistor | Single IGBTs | IGBTs - Single - HGTG5N120BND | Discrete Semiconductor Products - Transistors - IGBTs | Triode/MOS Tube/Transistor >> IGBTs | FAIRCHILD SEMICONDUCTOR HGTG5N120BND IGBT Single Transistor, 21 A, 2.7 V, 167 W, 1.2 kV, TO-247, 3 Pins | Single Igbt, 1.2Kv, 21A; Continuous Collector Current Onsemi | IGBT Transistors | Single IGBTs | |
| PD | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | TO-247; TO-247 | TO-247 | TO-3 | TO-247; TO-247-3 | ||||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube | Tube; Tube | |||||
| Structure | NPT |
