IGBT 600V 70A 290W Through Hole TO-247-3
600V 70A IGBT Transistor TO-247 Product overview: HGTG40N60B3 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 70A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 70A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTG40N60B3 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204795-HGTG40N60B3
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 250nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 70A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 290W
Pulsed Collector Current: 330A
Collector-emitter saturation voltage(Max): 2V @ 15V, 40A
Total Switching Energy(Ets): 1.05mJ (on), 800μJ (off)
Turn-on and Turn-off delay time: 47ns/170ns
Testing Conditions: 480V, 40A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 450
SINGLE IGBT, 600V, 70A; Continuous Collector Current:70A; Collector Emitter Saturation Voltage:1.4V; Power Dissipation:290W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- RoHS Compliant: Yes
IGBT Transistors 600V N-Channel IGBT UFS Series
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 70A IC, 600V V BR CES, N-CHANNEL, TO-247, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
FAIRCHILD SEMICONDUCTOR HGTG40N60B3IGBT Single Transistor, 70 A, 2 V, 290 W, 600 V, TO-247, 3 Pins
IGBT 600V 70A 290W TO247
IGBT 600V 70A 290W TO247
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | HGTG40N60B3FS-ND | 279-HGTG40N60B3 | 204795-HGTG40N60B3 | 58K1594 | HGTG40N60B3 | 16115682 | 598-HGTG40N60B3 | HGTG40N60B3 | HGTG40N60B3 |
| Product Name | Single IGBTs | 600V 70A IGBT Transistor | IGBTs - Single - HGTG40N60B3 | Single Igbt, 600V, 70A; Continuous Collector Current Onsemi | IGBT Transistors | IGBT | FAIRCHILD SEMICONDUCTOR HGTG40N60B3IGBT Single Transistor, 70 A, 2 V, 290 W, 600 V, TO-247, 3 Pins | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | TO-3 | TO-247; TO-247-3 | |||||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube | |||||
| PD | 290000 milliwatts | 290000 milliwatts | 290000 milliwatts | 290000 milliwatts | |||||
| VCE(on) | 2 volts | 1.4 volts |
