600V 75A IGBT Transistor TO-247 Product overview: HGTG40N60A4 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTG40N60A4 can be used for catalog matching and distributor lookup.
IGBT 600V 75A 625W Through Hole TO-247-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204794-HGTG40N60A4
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Gate Charge: 350nC
Family Name: HGTG40N60A4
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 625W
Pulsed Collector Current: 300A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 40A
Total Switching Energy(Ets): 400μJ (on), 370μJ (off)
Turn-on and Turn-off delay time: 25ns/145ns
Testing Conditions: 390V, 40A, 2.2 Ohm, 15V
Alternative Parts (Cross-Reference): STGW35NB60S; IXGH30N60B2; IXGH39N60BD1SN;
Introduction Date: December 17, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 450
Insulated Gate Bipolar Transistor, 75A, 600V, N-Channel, TO-247
IGBT 600V 75A TO247-3
SINGLE IGBT, 600V, 75A; Continuous Collector Current:75A; Power Dissipation:625W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
IGBT Transistors 600V N-Channel IGBT SMPS Series
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Bipolar RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-HGTG40N60A4 | HGTG40N60A4-ND | 204794-HGTG40N60A4 | HGTG40N60A4 | HGTG40N60A4 | HGTG40N60A4 | 60K5973 | HGTG40N60A4 |
| Product Name | 600V 75A IGBT Transistor | Single IGBTs | IGBTs - Single - HGTG40N60A4 | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs | Single Igbt, 600V, 75A; Continuous Collector Current Onsemi | IGBT Transistors | |
| PD | 625000 milliwatts | 625000 milliwatts | 625000 milliwatts |
