onsemi Single IGBTs HGTG30N60B3D

IGBT 600V 60A 208W Through Hole TO-247-3

600V 60A PT IGBT Transistor TO-247 Through Hole Product overview: HGTG30N60B3D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTG30N60B3D can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001352-HGTG30N60B3D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 55ns
Input Type: Standard
Gate Charge: 170nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 208W
Pulsed Collector Current: 220A
Collector-emitter saturation voltage(Max): 1.9V @ 15V, 30A
Total Switching Energy(Ets): 550μJ (on), 680μJ (off)
Turn-on and Turn-off delay time: 36ns/137ns
Testing Conditions: 480V, 30A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 450

IGBT 600V 60A TO247-3