IGBTs 600V N-Channel IGBT SMPS Series Product overview: HGTG30N60A4D from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 600V. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTG30N60A4D can be used for catalog matching and distributor lookup.
IGBT 600V 75A 463W Through Hole TO-247-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 113417-HGTG30N60A4D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 55ns
Input Type: Standard
Gate Charge: 225nC
Family Name: HGTG30N60A4D
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 463W
Pulsed Collector Current: 240A
Collector-emitter saturation voltage(Max): 2.6V @ 15V, 30A
Total Switching Energy(Ets): 280μJ (on), 240μJ (off)
Turn-on and Turn-off delay time: 25ns/150ns
Testing Conditions: 390V, 30A, 3 Ohm, 15V
Alternative Parts (Cross-Reference): APT30GN60BDQ2; APT30GN60BDQ2G; STGWA40HP65FB2; STGWA40H65DFB2;
Introduction Date: December 17, 2001
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 450
IGBT 600V 75A 463W TO247
IGBT Transistors 600V N-Channel IGBT SMPS Series
IGBT, TO-247; DC COLLECTOR CURRENT:75A; COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):1.8V; POWER DISSIPATION PD:463W; COLLECTOR EMITTER VOLTAGE V(BR)CEO:600V; NO. OF PINS:3PINS; OPERATING TEMPERATURE MAX:150¦C; PRODUCT RANGE:-; MSL:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT, TO-247; Continuous Collector Current:75A; Power Dissipation:463W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
IGBT Single Transistor, General Purpose, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 RoHS Compliant: Yes
IGBT 600V 75A 463W TO247
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-HGTG30N60A4D | HGTG30N60A4D-ND | 113417-HGTG30N60A4D | HGTG30N60A4D | HGTG30N60A4D | 16115662 | 58K8903 | 05M3504 | HGTG30N60A4D |
| Product Name | N-Channel 600V IGBT Transistor | Single IGBTs | IGBTs - Single - HGTG30N60A4D | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | IGBT | Igbt, To-247; Continuous Collector Current Onsemi | Igbt Single Transistor, General Purpose, 75 A, 2.6 V, 463 W, 600 V, To-247, 3 Rohs Compliant Onsemi | Single IGBTs |
| PD | 463 milliwatts | 463000 milliwatts | 463000 milliwatts |
