600V 70A IGBT Transistor TO-247 Through Hole Product overview: HGTG20N60A4D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 70A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 600V, 70A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTG20N60A4D can be used for catalog matching and distributor lookup.
IGBT 600V 70A 290W TO247
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 005484-HGTG20N60A4D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 35ns
Input Type: Standard
Gate Charge: 142nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 70A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 290W
Pulsed Collector Current: 280A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 20A
Total Switching Energy(Ets): 105μJ (on), 150μJ (off)
Turn-on and Turn-off delay time: 15ns/73ns
Testing Conditions: 390V, 20A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Application Field: Used in Motor Drive & Control, Power Management, Industrial
Quantity per package: 450
DISCONTINUED BY MANUFACTURER, SINGLE IGBT, 600 VAC, 70 AMP, DC COLLECTOR, 70A, THROUGH HOLE, TO-247-3, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 RoHS Compliant: Yes
IGBT 600V 70A 290W TO247
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | HGTG20N60A4DFS-ND | 279-HGTG20N60A4D | HGTG20N60A4D | 005484-HGTG20N60A4D | 16115638 | 25M9637 | HGTG20N60A4D | HGTG20N60A4D |
| Product Name | Single IGBTs | Through-Hole 600V 70A IGBT Transistor | Single IGBTs | IGBTs - Single - HGTG20N60A4D | IGBT | Igbt Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, To-247, 3 Rohs Compliant Onsemi | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
