IGBT 600V 54A 167W Through Hole TO-247-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1043306-HGTG12N60A4D
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 30ns
Input Type: Standard
Gate Charge: 78nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 54A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 96A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 12A
Total Switching Energy(Ets): 55μJ (on), 50μJ (off)
Turn-on and Turn-off delay time: 17ns/96ns
Testing Conditions: 390V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Motor Drive & Control, Power Management, Industrial
Quantity per package: 450
600V 60A IGBT Transistor, TO-247, 167W, 30ns RR Product overview: HGTG12N60A4D from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 60A, 167W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 60A, 167W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTG12N60A4D can be used for catalog matching and distributor lookup.
IGBT 600V 54A 167W TO247
IGBT, 600V,54A, TO-247, DC COLLECTOR CURRENT 54A, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON) 2V, POWER DISSIPATION PD 167W, COLLECTOR EMITTER VOLTAGE V(BR)CEO 600V, NO. OF PINS 3PINS, OPERATING TEMPERATURE MAX 150¦C, MSL -, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
IGBT 600V 54A 167W TO247
IGBT, 600V,54A, TO-247; Continuous Collector Current:54A; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | HGTG12N60A4D-ND | 1043306-HGTG12N60A4D | 279-HGTG12N60A4D | HGTG12N60A4D | 16115618 | HGTG12N60A4D | 58K1585 |
| Product Name | Single IGBTs | IGBTs - Single - HGTG12N60A4D | 600V 60A 167W IGBT Transistor | Single IGBTs | IGBT | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 600V,54A, To-247; Continuous Collector Current Onsemi |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) |
