Insulated Gate Bipolar Transistor Product overview: HGTG12N60A4 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-HGTG12N60A4 can be used for catalog matching and distributor lookup.
IGBT 600V 54A 167W Through Hole TO-247-3
IGBT 600V 54A 167W TO247
SINGLE IGBT, 600V, 54A; Continuous Collector Current:54A; Power Dissipation:167W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-HGTG12N60A4 | HGTG12N60A4-ND | HGTG12N60A4 | 95B2565 |
| Product Name | IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Single Igbt, 600V, 54A; Continuous Collector Current Onsemi |
| PD | 167000 milliwatts | 167000 milliwatts |
